近日,安森美半导体宣布,进一步拓展其在业内领先的低饱和电压(Vce(sat))双极结晶体管(BJT)产品系列至WDFN6、WDFN3、SOT-23、SOT-563和ChipFET的封装。这些备有多种封装选择的新器件采用先进硅技术,与传统BJT或者平板MOSFET相比,其电源效率更佳,电池寿命更长。这些新器件是各种 ON Semiconductor has announced the further expansion of its industry-leading package of low-saturation voltage (Vce (sat)) bipolar junction transistor (BJT) products into WDFN6, WDFN3, SOT-23, SOT-563 and ChipFET packages. These new devices, available in a variety of package options, utilize advanced silicon technology to provide better power efficiency and longer battery life than traditional BJT or flat-panel MOSFETs. These new devices are all kinds