论文部分内容阅读
采用磁控溅射技术在Si衬底上沉积Si/[Fe(10 nm)/Nb(4 nm)/Fe(4 nm)/Nb(4 nm)]2/ [Fe(4nm)/Nb(4 nm)]4多层膜。用2 MeV的Xe离子在室温下辐照多层膜。采用俄歇深度剖析、X射线衍射和振动样品磁强计分析辐照引起的多层膜元素分布、结构及磁性变化。AES深度剖析谱显示当辐照注量达到1 .0×1014ions/cm2时,多层膜界面两侧元素开始混合;当辐照注量达到2 .0×1016ions/cm2时,多层膜层状结构消失,Fe层与Nb层几乎完全混合。XRD谱显示,当辐照注量达到1 .0×1014ions/cm2时, Nb的衍射峰和Fe的各衍射峰的峰位相对于标准卡片向小角方向偏移,这说明辐照引起Nb基和Fe基FeNb固溶体相的形成;当辐照注量大于1 .0×1015ions/cm2时,辐照引起非晶相的出现。VSM测试显示,多层膜的磁性随着结构的变化而变化。在此实验基础上,对离子辐照引起界面混合现象的机理进行了探讨。
Si / [Fe (10nm) / Nb (4nm) / Fe (4nm) / Nb (4nm)] 2 / [Fe (4nm) / Nb (4) was deposited on a Si substrate by magnetron sputtering nm)] 4 multilayer film. The multilayer film was irradiated with 2 MeV Xe ions at room temperature. The Auger depth analysis, X-ray diffraction and vibrating sample magnetometer were used to analyze the elemental distribution, structure and magnetic properties of multilayer films. AES depth profile shows that when the radiation fluence reaches 1.0 × 1014ions / cm2, the elements on both sides of the multi-layer interface begin to mix; when the radiation fluence reaches 2.0 × 1016ions / cm2, The structure disappears and the Fe and Nb layers are almost completely mixed. XRD patterns show that when the radiation fluence reaches 1.0 × 1014ions / cm2, the diffraction peak of Nb and the peak position of each diffraction peak of Fe shift from the standard card toward the small angle, which indicates that the irradiation causes the Nb group and Fe FeNb solid solution phase formation; when the radiation fluence is greater than 1.0 × 1015ions / cm2, irradiation causes the appearance of amorphous phase. VSM tests show that the magnetic properties of multilayer films change with the structure. Based on this experiment, the mechanism of ion-induced interface mixing was discussed.