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介绍了一种简单的HWE装置和利用这一装置在BaF_2(111)面上生长PbTe单晶外延层的工艺。扫描电镜、X-光衍射和霍尔测量表明,PbTe单晶外延层是完美的。
A simple HWE device and the process of growing PbTe single crystal epitaxial layer on BaF_2 (111) surface by using this device are introduced. Scanning electron microscopy, X-ray diffraction and Hall measurements show that PbTe single crystal epitaxial layers are perfect.