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提出一种二氧化硅 /多晶硅 /二氧化硅夹心深槽场限制环新结构来提高晶体管的击穿电压 .模拟结果显示 ,该结构可以使射频功率双极性晶体管的击穿电压几乎 10 0 %达到平行平面结的理想值
A new structure of silicon / polysilicon / silicon dioxide deep trench field limiting ring is proposed to improve the breakdown voltage of the transistor.The simulation results show that the breakdown voltage of the RF power bipolar transistor can be almost 100% Achieve the ideal value of the parallel plane junction