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本文报导了我们研制的金属-绝缘体-N/P结半导体(MINP)结构电流控制负阻光敏开关。这四层MINP结构的电流-电压曲线与可控硅的伏安特性相似,正向有两个阻抗状态:高阻态和低阻态。当所加正向电压低于器件的开启电压时,它处于高阻态(关
This paper reports the metal-insulator-N / P junction semiconductor (MINP) structure current-controlled negative-resistance photo-sensitive switch that we developed. The current-voltage curve of the four-layer MINP structure is similar to that of the thyristor. There are two positive impedance states: high-impedance and low-resistance. When the applied forward voltage is lower than the turn-on voltage of the device, it is in a high-impedance state (OFF