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宇航半导体器件运行在一个复杂的空间辐射环境中,质子是空间辐射环境中粒子的重要组成部分,因而质子在半导体器件中导致的辐射效应一直受到国内外的关注。利用兰州重离子加速器(Heavy Ion Research Facility In Lanzhou)加速出的H2分子打靶产生能量为10 Me V的质子,研究了特征尺寸为0.5/0.35/0.15μm体硅和绝缘体上硅(SOI)工艺静态随机存储器(SRAM)的质子单粒子翻转敏感性,这也是首次在该装置上开展的质子单粒子翻转实验研究。实验结果表明特征尺寸为亚微米的SOI工艺SRAM器件对质子单粒子翻转不敏感,但随着器件特征尺寸的减小和工作电压的降低,SOI工艺SRAM器件对质子单粒子翻转越来越敏感;特征尺寸为深亚微米的体硅工艺SRAM器件单粒子翻转截面随入射质子能量变化明显,存在发生翻转的质子能量阈值,CR`EME-MC模拟结果表明质子在深亚微米的体硅工艺SRAM器件中通过质子核反应导致单粒子翻转。
Aerospace semiconductor devices operate in a complex space radiation environment. Protons are an important part of the particles in the space radiation environment. Therefore, the radiation effect caused by protons in semiconductor devices has been attracting attention both at home and abroad. The proton with energy of 10 MeV was generated by H2 molecular acceleration accelerated by Heavy Ion Research Facility in Lanzhou. The bulk silicon and SOI process with the characteristic size of 0.5 / 0.35 / 0.15μm were studied. Proton single-particle inversion sensitivity of random access memory (SRAM) is also the first experimental study of proton single-particle inversion on this device. The experimental results show that SOI process SRAM devices with sub-micron feature size are insensitive to single-particle proton flip-flop, but SOI process SRAM devices are more and more sensitive to single-particle proton flip-flop with the reduction of device feature size and operating voltage. The single-particle inversion section of the bulk silicon process SRAM device with the characteristic size of deep submicron changes obviously with the incident proton energy, and there is a threshold of proton energy that is flipped. The simulation results of CR`EME-MC show that the proton in the deep sub-micron bulk silicon process SRAM device In the proton nuclear reaction leads to single-particle turnover.