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The effect of back-diffusion of Mg dopants on optoelectronic characteristics of InGaN-based green light-emitting diodes(LEDs) is investigated.The LEDs with less Mg back-diffusion show blue shifts of longer wavelengths and larger wavelengths with the increasing current,which results from the Mg-dopant-related polarization screening.The LEDs show enhanced efficiency with the decreasing Mg back-diffusion in the lower current region.Light outputs follow the power law L ∝ I~m,with smaller parameter m in the LEDs with less Mg back-diffusion,indicating a lower density of trap states.The trap-assisted tunneling current is also suppressed by reducing Mgdefect-related nonradiative centers in the active region.Furthermore,the forward current-voltage characteristics are improved.
The effect of back-diffusion of Mg dopants on optoelectronic characteristics of InGaN-based green light-emitting diodes (LEDs) is investigated. The LEDs with less Mg back-diffusion show blue shifts of longer wavelengths and the increased wavelengths with the increasing current, which results from the Mg-dopant-related polarization screening. LEDs show enhanced efficiency with the decreasing Mg back-diffusion in the lower current region. Light outputs follow the power law L α I ~ m, with smaller parameter m in the LEDs with less Mg back-diffusion, indicating a lower density of trap states. The trap-assisted tunneling current is also suppressed by reducing Mgdefect-related nonradiative centers in the active region. Future, the forward current-voltage characteristics are improved.