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采用热丝ＣＶＤ法，以Ｈ２和ＣＨ４混合气体为气体源，在涂有巴基管的单晶硅基底上，对金刚石薄膜生长进行了优化工艺参数实验。对所得薄膜进行了Ｘ射线衍射、Ｒａｍａｎ光谱和ＳＥＭ检测，结果表明：在适宜的钨丝功率（对应一定的钨丝温度）和基底温度条件下，以巴基管为涂层，在硅基底上能快速生成优质的金刚石薄膜，并且金刚石晶形随积时间的延长呈现聚晶倾向。
The hot-wire CVD method was used to optimize the process parameters of the growth of diamond thin films on a single-crystal Si substrate coated with Bucky tubes by using a mixed gas of H2 and CH4 as a gas source. The results of X-ray diffraction, Raman spectroscopy and SEM analysis of the obtained thin films show that under the suitable tungsten power (corresponding to a certain tungsten temperature) and the substrate temperature, the Bajik tube is coated on the silicon substrate Can quickly generate high-quality diamond film, and the diamond crystal form with the extension of time polycrystalline tendency.