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用微波等离子体化学气相沉积方法合成高品质同质外延金刚石膜， 并且用扫描电镜和阴 极荧光分析法评价。为了得到高薄膜生长速率， 把甲烷浓度设定在 4％。薄膜上的生长丘的数 量和大小依赖于生长条件。在本工作的样品中 ,未发现任何非外延晶粒。室温下的阴极荧光分 光结果表明这些金刚石薄膜具有与自由励起子相关的谱峰。氢终端的膜表面制作的铝电极显 示了 P型整流特性 ,击穿电压高于 380V。实验结果表明，阴极荧光分析法观测到的缺陷和电性 能密切相关，并且可以在有室温边发射的金刚石表面上制作具有高击穿电压的整流电极。
High-quality homoepitaxial diamond films were synthesized by microwave plasma chemical vapor deposition and evaluated by scanning electron microscopy and cathodic fluorescence spectrometry. To get a high film growth rate, set the methane concentration to 4%. The number and size of the growing mounds on the film depend on the growth conditions. In this working sample, no non-epitaxial grains were found. The results of cathodic fluorescence spectroscopy at room temperature show that these diamond films have peaks associated with free excitons. The aluminum electrode on the hydrogen terminated membrane surface shows P-type rectification with a breakdown voltage higher than 380V. The experimental results show that the defects observed by the cathodic fluorescence analysis are closely related to the electrical properties and that the rectifying electrodes with high breakdown voltage can be fabricated on the surface of the diamond with room-temperature emission.