一、前言在现代科学技术中,很多领域都需要应用薄膜材料,尤其是在半导体方面,显得更为突出。随着半导体器件的飞速发展,对制备单晶薄膜材料的要求愈来愈高。过去制备单晶薄膜材料常用气相外延和液相外延两种方法。这两种方法虽然能够适应一般的要求,但对某些要求很薄、很大、纯度极高和结构复杂的单晶薄膜场合,往往不能满足要求。因此,研究新工艺,制备满足上述要求的单晶薄膜材料,是一项十分紧迫的任务。也由于科学技术和仪器设备的进步,为研究新工艺、制备新材料提供了条件。于是近年来,与分子束外延生长研究的同时,又提出一种新颖的外延生长技术——固相外延生 First, the preface In modern science and technology, many areas need to use thin-film materials, especially in the semiconductor, it is more prominent. With the rapid development of semiconductor devices, the requirements for preparing single crystal thin film materials are getting higher and higher. In the past, single-crystal thin-film materials commonly used two methods of vapor-phase epitaxy and liquid-phase epitaxy. Although these two methods can meet the general requirements, they are often unable to meet the requirements for some thin film, large, high purity and complex structure single crystal thin film applications. Therefore, the study of new processes, to meet the above requirements to prepare single-crystal thin film material, is a very urgent task. Also due to advances in science and technology and equipment, for the study of new technology, to provide the conditions for the preparation of new materials. So in recent years, with molecular beam epitaxy growth research at the same time, also proposed a novel epitaxial growth technology - solid phase epitaxy