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采用激光分子束外延法(LMBE)在p型Si(100)衬底上沉积了(HfO2)x(Al2O3)y(NiO)1-x-y栅介质薄膜,研究了其热稳定性以及阻挡氧扩散的能力。X射线衍射表明在HfO2中掺入Ni和Al元素明显提高了其结晶温度。原子力显微镜测试显示:在N2中退火后薄膜表面是原子级平滑连续的,没有发现针孔。900℃N2中退火后的薄膜在高分辨透射电镜下没有发现硅酸盐界面层。实验结果表明在氧化物薄膜与硅衬底之间引入Ni-Al-O置入层能够防止硅酸盐低介电界面层的生成,这有利于MOS晶体管的进一步尺度缩小。
(HfO2) x (Al2O3) y (NiO) 1-xy gate dielectric films were deposited on p-type Si (100) substrates by laser molecular beam epitaxy (LMBE). The thermal stability and oxygen barrier ability. X-ray diffraction shows that incorporation of Ni and Al into HfO2 significantly increases the crystallization temperature. Atomic force microscopy tests showed that the film surface was atom-level continuous and smooth after annealing in N2, and no pinholes were found. After annealing at 900 ℃ for N2, no silicate interfacial layer was found under high resolution transmission electron microscopy. The experimental results show that the introduction of Ni-Al-O insertion layer between the oxide film and the silicon substrate can prevent the formation of silicate low dielectric interface layer, which is beneficial for further scaling of the MOS transistor.