论文部分内容阅读
用直流磁控溅射法在(100)LaAlO3衬底上制备了La0.9Sr0.1MnO3薄膜.经退火处理后薄膜的原子力显微镜形貌观测和X射线衍射分析显示具有比较好的质量.电阻率-温度关系表明La0.9Sr0.1MnO3薄膜在281K处发生金属绝缘体转变.电流在0.01—4mA范围内,薄膜的峰值电阻率随电流增大而减小,在4mA下获得了30.5%的峰值电阻率变化率,并从相分离图像给出了简单解释.
The La0.9Sr0.1MnO3 thin films were prepared on (100) LaAlO3 substrates by DC magnetron sputtering.The results of atomic force microscopy and X-ray diffraction showed that the films had good quality.The resistivity- The temperature dependence of the metal insulator transition at La0.9Sr0.1MnO3 shows that the peak resistivity of the film decreases with the increase of current at 0.01-4mA, and the peak resistivity change of 30.5% at 4mA Rate and gives a simple explanation from the phase separation of the image.