绪言由于晶体三极管的发明,对于高质量的半导体材料的要求越显得需要。但多晶的半导体材料不能满足这种要求,而必须制备结构完正,纯度甚高,并具有可控制电阻率的单晶材料。此外在固体物理的研究中;在冶金学关于金属性质的探讨中以及原子能的研究中;都需要超纯的,完正的单晶材料。因此单晶材料制备的研究和技术,不但在半导体材料工艺学中非常重要;而且在其他的科学和工程技术中也越来越感到需要。制备单晶的方法很多,但对半导体材料来说最常用的是乔赫劳新基(Czochralski)的拉制单晶法。虽然近年来区域致均法已广泛地用于半导体锗和其他Ⅲ—Ⅴ族化合物等材料的制备,但对硅来说这种能使固液界面不与坩埚器壁相接触的拉制法,不 Introduction Due to the invention of the transistor, the higher the requirement for high quality semiconductor material appears to be needed. However, polycrystalline semiconductor materials can not meet this requirement. Instead, monocrystalline materials with well-defined structures, high purity and controlled resistivity have to be prepared. In addition, in the study of solid state physics, in the study of metallurgy on the nature of the metal and in the study of atomic energy, ultra pure and perfect single crystal materials are needed. Therefore, the research and technology of single crystal material preparation are not only very important in semiconductor material technology, but also become more and more necessary in other science and engineering technologies. There are many ways to prepare single crystals, but the most commonly used for semiconductor materials is the drawn single crystal method by Czochralski. Although the region-based averaging method has been widely used for the preparation of semiconductor germanium and other Group III-V compounds and the like in recent years, such a drawing method for silicon that does not bring the solid-liquid interface into contact with the crucible wall, Do not