论文部分内容阅读
引言智能功率集成电路VK05专门用于半桥电子镇流器电路,采用的纵向智能功率(VIPower)专利技术,在发射极开关(共射-共基)结构内集成一个单片功率双极结型晶体管(BJT)和场效应MOS晶体管。VK05的内部结构如图1所示。该器件有5个连接引脚,其中有3个控制引脚:用于启动电子镇流器的Di
INTRODUCTION The Smart Power Integrated Circuit (VK05) is specifically designed for half-bridge electronic ballast circuits and incorporates proprietary VIPower patented technology for integrating a monolithic power bipolar junction in an emitter switch (cascode) Transistor (BJT) and Field Effect MOS Transistor. VK05’s internal structure shown in Figure 1. The device has five connection pins, of which three control pins: used to start the electronic ballast Di