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叙述了半导体泵浦Ｎｄ：ＹＶＯ４微片Ｆ－Ｐ电光调Ｑ激光器的原理．利用ＬｉＴａＯ３电光调制的ＦＰ标准具取代输出耦合腔镜作为调Ｑ器件．详细讨论了调Ｑ标准具的反射率特性、工作物质的温度特性对Ｆ－Ｐ调Ｑ器件的影响．同时讨论了Ｆ－Ｐ标准具的合适的膜系反射率以及标准具作为调Ｑ耦合镜时具有的模式选择特性。为半导体泵浦的微型调Ｑ器件的实现提供理论依据和技术保证．
The principle of semiconductor pumped Nd: YVO4 micro-F-P electro-optic Q-switched Q laser is described. The FP etalon with LiTaO3 electro-optic modulation replaces the output coupling mirror as a Q-switched device. The reflectivity characteristics of Q-switched etalon and the effect of temperature characteristics of working substance on F-P Q-switched devices are discussed in detail. The appropriate film reflectance of the F-P etalon and the mode selection characteristics of the etalon as a Q-switched coupler mirror are also discussed. For the semiconductor pumped micro-Q devices to provide a theoretical basis and technical assurance.