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通过在AlN薄膜体声波谐振器上引入压电缓冲层和外部电阻抗来调节谐振器的频率特性,在考虑了缓冲层和外部电阻抗后,得到薄膜谐振器的输入电阻抗公式,并用来描述器件的机电行为。通过计算阻抗-频率谱评估了薄膜谐振器的频率特性和有效机电耦合系数k2eff,研究了缓冲层和外部电阻抗包括电阻、电感、电容对薄膜谐振器的阻抗-频率谱的影响。计算结果表明,外部电阻抗的引入可根本上改变薄膜谐振器的共振频率,且对k2eff有重要的影响。
By introducing the piezoelectric buffer layer and the external electrical impedance on the AlN film bulk acoustic resonator, the frequency characteristics of the resonator are adjusted. After taking into account the buffer layer and the external electrical impedance, the input impedance formula of the thin film resonator is obtained and used to describe Electromechanical behavior of the device. The frequency characteristics and effective electromechanical coupling coefficient k2eff of the thin film resonator were evaluated by calculating the impedance-frequency spectrum. The influence of the buffer layer and the external electrical impedance, including resistance, inductance and capacitance, on the impedance-frequency spectrum of the thin film resonator was studied. The calculation results show that the introduction of external electrical impedance can fundamentally change the resonant frequency of the thin film resonator, and k2eff have a significant impact.