论文部分内容阅读
室温下,采用脉冲直流反应磁控溅射方法在玻璃衬底上制备了掺铝的氧化锌(ZnO:Al,AZO)透明导电薄膜。采用配有λ-sensor氧分压传感器的控制器闭环控制氧分压,研究了氧分压对薄膜结构、表面形貌和光电性能的影响。结果表明:在不同的氧分压下制备的AZO薄膜均为多晶纤锌矿结构,具有[002]择优取向,其晶体呈柱状生长,晶粒之间结合紧密。氧分压为3.36×10–2Pa时,AZO薄膜的性能指数最高,其电阻率为1.15×10–3·cm,相应的载流子浓度为2.1×1020/cm3,载流子迁移率为25.8cm2/(V s),可见光透射率为79.1%。随着AZO薄膜的载流子浓度由1.03×1020cm–3增加到3.64×1020cm–3,薄膜禁带宽度由3.49eV增大到3.72eV。
At room temperature, a transparent conductive film doped with aluminum oxide (ZnO: Al, AZO) was prepared on a glass substrate by pulsed direct current reactive magnetron sputtering. The closed-loop controlled partial pressure of oxygen with the sensor equipped with λ-sensor oxygen partial pressure sensor was used to study the effect of oxygen partial pressure on the structure, surface morphology and photoelectric properties of the film. The results show that the AZO films prepared at different oxygen partial pressures are polycrystalline wurtzite structure with the preferred orientation [002]. The crystals grow in columnar shape and the grains are tightly bonded together. The AZO film has the highest performance index with resistivity of 1.15 × 10-3 · cm, the corresponding carrier concentration of 2.1 × 10 20 / cm 3 and the carrier mobility of 25.8 at oxygen partial pressure of 3.36 × 10 -2 Pa. cm2 / (Vs), visible light transmittance of 79.1%. As the carrier concentration of AZO thin film increases from 1.03 × 10 20 cm -3 to 3.64 × 10 20 cm -3, the forbidden band width increases from 3.49eV to 3.72eV.