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采用正交试验方法研究了射频溅射的工艺因素对Ｓｎ膜形成过程的影响，得到了射频溅射制备Ｓｎ膜新工艺的最佳条件。Ｘ－射线衍射及ＳＥＭ实验结果表明在该工艺条件下得到的Ｓｎ膜为非常细小均匀的β－Ｓｎ的晶体结构。
The influence of the technological factors of RF sputtering on the formation of Sn film was studied by orthogonal test. The optimum conditions for the new Sn film formation by RF sputtering were obtained. X-ray diffraction and SEM results show that the Sn film obtained under the above process conditions has a very fine uniform β-Sn crystal structure.