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本文利用电子衍射和矩阵分析方法探讨了析出V_4C_3在马氏体相变中的遗传现象。结果表明,奥氏体、马氏体和V_4C_3三相间的晶体学取向关系为: (010)_A∥(110)_M∥(010)_(V_4C_3) [101]_A∥[111]_M∥[101]_(V_4C_3)V_4C_3首先在奥氏体中析出,遗传至马氏体中后,虽能与马氏体保持一定的取向关系,但界面结构理论分析指出,两相间的界面结合能高于Baker-Nutting关系所规定的结合能,因而是一五稳态。由于V_4C_3沿奥氏体的晶体缺陷析出,故这些缺陷将遗传至马氏体中。
In this paper, the genetic phenomenon of precipitated V_4C_3 during martensitic transformation was discussed by means of electron diffraction and matrix analysis. The results show that the crystallographic orientations of austenite, martensite and V_4C_3 three phases are: (010) _A∥ (110) _M∥ (010) _ (V_4C_3) [101] _A∥ [111] _M∥ [101 ] __ (V_4C_3) V_4C_3 firstly precipitated in austenite and inherited to martensite, though it can maintain a certain orientation relationship with martensite. However, the theoretical analysis of interface structure indicates that the interfacial bonding energy between two phases is higher than that of Baker -Nutting relationship provided by the binding energy, and therefore is a steady state. Due to the precipitation of V_4C_3 along the austenite crystal defects, these defects will be inherited into the martensite.