论文部分内容阅读
由于加工工艺的局限性,在Nand存储器(Nand Flash)控制器设计时应具有处理存储数据出错的功能,但是还要保持一定的纠错速度.为解决该问题,在分析常用的差错控制编码(ECC)算法的基础上,提出了一种高速层进式Nand Flash纠错算法,以提高Nand Flash的读写速度;同时设计了一个可纠4位错的Nand Flash控制器.仿真结果表明,采用该编码可有效减少存储器数据纠错时间.
Due to the limitations of the processing technology, the Nand Flash controller should have the function of dealing with the error of storing data, but still maintain a certain error correction speed.In order to solve this problem, in the analysis of the commonly used error control coding (ECC) algorithm, a high-speed layered Nand Flash error correction algorithm is proposed to improve the read and write speed of Nand Flash. At the same time, a Nand Flash controller that can correct 4 bit errors is designed. The simulation results show that, This encoding can effectively reduce the memory data error correction time.