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采用高频（１ＭＨｚ）Ｃ－Ｖ测试和红外谱，研究了工艺参数对Ｘｅ激发真空紫外光（ＶＵＶ）直接光ＣＶＤＳｉＯ２的ＳｉＯ２／Ｓｉ界面特性的影响。结果表明：衬底温度Ｔｓ对固定氧化物电荷密度ΔＮｏｔ、慢界面态密度ΔＮｓｔ的影响比反应室总气压Ｐｃ和ＳｉＨ２／Ｏ２分压比显著。ΔＮｏｔ和ΔＮｓｔ在１１０°Ｃ附近有极小值，大小为１０１０ｃｍ－２量级。Ｔｓ＞１２０°Ｃ，ΔＮｏｔ呈正电荷性，Ｔｓ＜１１０°Ｃ，ΔＮｏｔ呈负电荷性。Ｓｉ－Ｏ－Ｓｉ伸缩振动吸收峰位在１０６０～１０８０ｃｍ－２间，随Ｔｓ的减少而增加。
The effect of process parameters on the SiO2 / Si interface properties of Xe-excited VUV direct CVDVSiO2 was investigated by high frequency (1MHz) C-V test and infrared spectroscopy. The results show that the effect of substrate temperature Ts on the charge density ΔNot of fixed oxide and the ΔNst of slow interface state is more significant than that of total Pc and SiH2 / O2 in the reaction chamber. ΔNot and ΔNst have a minimum around 110 ° C in the order of 1010 cm-2. Ts> 120 ° C, ΔNot is positively charged, Ts <110 ° C, and ΔNot is negatively charged. Si-O-Si stretching vibration absorption peak in 1060 ~ 1080cm-2, with the decrease of Ts increases.