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简介了减薄漂移区多沟道SOILIGBT结构雏形,根据先进VLSI工艺调研结果讨论了减薄漂移区新型微结构的可实现性,提出了可能实现的三种表面微结构及其工艺实现方法;指出了这种器件雏形结构存在的几个主要问题,有针对性地探讨了改进措施,并提出了面向智能PowerICs应用的同心圆环源漏互包SOILIGBT结构,及其迄待研究的主要问题与部分解决措施。
Based on the research results of advanced VLSI process, the feasibility of new microstructures in thinned drift region is introduced. Three possible surface microstructures and their implementation methods are proposed. It is pointed out that Several major problems existing in the prototype structure of this device are pointed out, and the improvement measures are discussed in detail. The SOILIGBT structure of concentric circle source and drain mutual-package for the application of intelligent PowerICs is proposed, and the main problems and parts solution.