研究了陶瓷衬底上多晶硅薄膜的生长和区熔再结晶。利用快速热化学气相沉积(RTCVD)方法,在低成本的Al_2O_3衬底上沉积了重掺杂的致密多晶硅薄膜,薄膜的晶粒尺寸在微米级。经区熔再结晶(ZMR)后,薄膜的晶粒尺寸有了较大的提高,而且迁移率较高,这样的薄膜可以用作晶体硅薄膜太阳电池的籽晶层。最大的晶粒达到毫米量级,空穴迁移率超过50cm~2·V~(-1)·s~(-1)。在籽晶层上外延的活性层形貌与此类似。这些结果显示这种薄膜在光伏应用方面有较大的潜力。 The growth and recrystallization of polycrystalline silicon thin films on ceramic substrates were investigated. Using the rapid thermal chemical vapor deposition (RTCVD) method, a heavily doped dense polysilicon thin film was deposited on a low cost Al 2 O 3 substrate with a grain size of micrometers. After the zone recrystallization (ZMR), the grain size of the film has been greatly increased, and the mobility is higher, such a film can be used as a seed layer of a crystalline silicon thin film solar cell. The largest grains reach the order of millimeter, and the hole mobility exceeds 50cm ~ 2 · V -1 s -1. The epitaxial active layer morphology on the seed layer is similar. These results show that this film has great potential for photovoltaic applications.