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We present an AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) with an NbAlO high-k dielectric deposited by atomic layer deposition (ALD).Surface morphology of samples are observed by atomic force microscopy (AFM),indicating that the ALD NbAlO has an excellent-property surface.Moreover,the sharp transition from depletion to accumulation in capacitance-voltage (C-V)curse of MIS-HEMT demonstrates the high quality bulk and interface properties of NbAlO on AlGaN.The fabricated MIS-HEMT with a gate length of 0.5 μm exhibits a maximum drain current of 960 mA/mm,and the reverse gate leakage current is almost 3 orders of magnitude lower than that of reference HEMT.Based on the improved direct-current operation,the NbAlO can be considered to be a potential gate oxide comparable to other dielectric insulators.
We present an AlGaN / GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) with an NbAlO high-k dielectric deposited by atomic layer deposition (ALD). Surf morphology of samples are observed by atomic force microscopy (AFM) metastable, depletion to accumulation in capacitance-voltage (CV) curse of MIS-HEMT demonstrates the high quality bulk and interface properties of NbAlO on AlGaN. fabricated MQ- HEMT with a gate length of 0.5 μm exhibits a maximum drain current of 960 mA / mm, and the reverse gate leakage current is almost 3 orders of magnitude lower than that of reference HEMT. Based on the improved direct-current operation, the NbAlO can be considered to be a potential gate oxide comparable to other dielectric insulators.