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建立了一套进行MOS结构Si／SiO2界面态电荷泵测量的测试系统，其发展的快速电荷泵技术可使界面态测量速度达到5次／秒．分析研究了泵电流与Si／SiO2界面态测量之间所应关注的技术细节．借助于电荷泵法，研究了PMOSFETSi／SiO2界面态在辐照和退火过程中生长和退火的行为规律．
A set of test system for measuring Si / SiO2 interfacial charge pump in MOS structure has been established. The rapid charge pump technology developed by this paper can make the interface state measurement speed up to 5 times per second. Analysis and study of the pump current and Si / SiO2 interface state between the technical attention should be paid attention to. By means of charge pump method, the behavior of the growth and annealing of PMOSFETSi / SiO2 interfacial states during irradiation and annealing was studied.