论文部分内容阅读
促使物相尽可能地向Pt2 Si和PtSi转化 ,是PtSi薄膜工艺研究中的重要工作。文中通过用X射线衍射 (XRD)、X射线光电子能谱 (XPS)微观分析手段对PtSi薄膜形成物相分步观察 ,研究了长时间变温退火、真空退火以及真空和保护气体 (N2 和H2 )退火等工艺条件对溅射PtSi薄膜物相形成的影响。结果表明 ,氢气气氛退火能提高薄膜质量 ;真空退火可以减少氧元素对成膜的影响
Promote the phase as much as possible to Pt2 Si and PtSi conversion, PtSi film technology is an important work in the study. In this paper, phase-by-step observation of the formation of PtSi thin films was carried out by means of X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The annealing, vacuum annealing and vacuum and shielding gases (N2 and H2) Annealing and other process conditions on the sputtering PtSi film phase formation. The results show that hydrogen annealing can improve the film quality; vacuum annealing can reduce the impact of oxygen on the film