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采用离子注入形成沟道层和n~+欧姆接触区的技术,研制了大功率GaAsFET。由于引入了表面载流子浓度高的n~+区,器件的烧毁特性得到了改善。业已表明烧毁电压可以高于40V,器件的源漏饱和电流(I_(dss))和射频输出功率比用金属有机物化学汽相淀积(MOCVD)方法制作的功率GaAsFET更为均匀,已用实验证明由于芯片均匀性好,这种FET的多芯片运用具有优良的功率合成效率。一个总栅宽W_G为14.4mm的双芯片器件已在10GHz下以4dB的增益和23％的功率附加效率推出5W的输出功率;总栅宽为28.8mm的四芯片器件在8GHz下给出10W(G=4.5dB,η_(add)=23％),另一个总栅宽为48mm的四芯片器件在5GHz下推出15W(G=8dB,η_(add)=30％)。
Using ion implantation to form the channel layer and the n ~ + ohmic contact region, a high-power GaAsFET has been developed. Due to the introduction of n + regions with high surface carrier concentrations, the burnout characteristics of the device are improved. It has been shown that the burnout voltage can be higher than 40V and that the device’s source-drain saturation current (I_ (dss)) and RF output power are more uniform than power GaAsFETs fabricated by metal-organic chemical vapor deposition (MOCVD) Due to the good chip uniformity, the multi-chip operation of this FET has excellent power-combining efficiency. A two-chip device with a total gate width of W_G of 14.4 mm has introduced an output power of 5 W with a gain of 4 dB and a power addition of 23% at 10 GHz; a four-chip device with a total gate width of 28.8 mm gives 10 W at 8 GHz G = 4.5dB, η_ (add) = 23%) and another four-chip device with a total gate width of 48mm is 15W (G = 8dB, η_ (add) = 30%) at 5GHz.