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利用热壁外延技术在CdTe衬底的(111)A面和B面生长了CdTe薄膜。源温度和衬底温度分别在670～800℃和600～760℃之间,生长速率为0.8～1.3μm/h。X射线衍射和荧光分析表明,CdTe外延层为[111]方向生长的高纯单晶薄膜,外延层表面组分和纵向组分均勺;回摆曲线峰半高宽的典型值为1.38′,表明外延层为高质量的CdTe单晶膜。
CdTe films were grown on the (111) A surface and B surface of the CdTe substrate by thermal wall epitaxy. The source temperature and substrate temperature were between 670-800 ℃ and 600-760 ℃ respectively, and the growth rate was 0.8-1.3μm / h. X-ray diffraction and fluorescence analysis show that the CdTe epitaxial layer is a high-purity single crystal thin film grown in the [111] direction, and the surface component and the longitudinal component of the epitaxial layer are both scooped. The typical value of the full width at half maximum of the sway curve peak is 1.38 ’ Indicating that the epitaxial layer is a high quality CdTe single crystal film.