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常温下,用电化学氧化法在单晶硅表面形成 SiO_2钝化膜,钝化液可为有机溶液或纯水,控制电压能调节钝化膜厚度。测试并比较了钝化膜的基本性能。
At room temperature, SiO 2 passivation film is formed on the surface of monocrystalline silicon by electrochemical oxidation. The passivation solution can be organic solution or pure water, and the control voltage can regulate the thickness of passivation film. The basic properties of passivation films were tested and compared.