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利用热灯丝化学气相沉积方法在光滑的钼上沉积了金刚石膜。用扫描电子显微镜和 Raman 谱对金刚石膜进行了分析，结果表明金刚石膜是由许多金刚石晶粒组成，晶粒间界主要是石墨相， 并且在膜内有许多缺陷。金刚石膜的场发射结果表明高浓度 CH4形成的金刚石膜场发射阈位电 场较低浓度 CH4形成的金刚石为低。这意味着杂质（如石墨）和缺陷（悬挂键）极大地影响了膜的 场发射性能。根据以上结果，提出了一种 CVD金刚石膜的场发射机制即膜内的缺陷增强膜内的 电场，石墨增大电子的的隧穿系数以增强 CVD金刚石膜的场发射。
Diamond films were deposited on smooth molybdenum using a hot filament chemical vapor deposition method. The diamond films were analyzed by scanning electron microscopy (SEM) and Raman spectroscopy. The results showed that the diamond films consisted of many diamond grains with a predominantly graphite phase boundary and many defects in the film. The field emission results of the diamond films indicate that diamond films formed by high concentration of CH4 form a lower threshold field of diamond film formation at lower threshold concentration CH4. This means that impurities (such as graphite) and defects (dangling bonds) greatly affect the field emission properties of the film. Based on the above results, a field emission mechanism of CVD diamond film, that is, defects in the film, enhances the electric field in the film, and graphite increases the electron tunneling coefficient to enhance the field emission of the CVD diamond film.