Temperature dependence of lattice constants is studied by using first-principles calculations to determine the effects of in-plane stiffness and charge transfer on the thermal expansions of monolayer semiconducting transition metal dichalco-genides. Unlike the corresponding bulk material, our simulations show that monolayer MX2 (M=Mo and W;X=S, Se, and Te) exhibits a negative thermal expansion at low temperatures, induced by the bending modes. Transition from con-traction to expansion at higher temperatures is observed. Interestingly, the thermal expansion can be tailored regularly by alteration of M or X atom. Detailed analysis shows that the positive thermal expansion coefficient is determined mainly by the in-plane stiffness, which can be expressed by a simple relationship. Essentially the regularity of this change can be attributed to the difference in charge transfer between the different elements. These findings should be applicable to other two-dimensional systems.