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在单晶Si(100)基体上利用电子回旋共振等离子体增强化学气相沉积法制备硅薄膜,并采用X射线衍射谱(XRD)、透射电镜(TEM)、Raman光谱、电子自旋共振(ESR)波谱等实验方法研究了不同Ar流量下硅薄膜微结构及悬挂键密度的变化。XRD及TEM实验结果得出,制备的硅薄膜的晶粒尺寸为12~16 nm,属纳晶硅薄膜。薄膜结晶度随镀膜时Ar流量增大而增大,而悬挂键密度则先迅速减小而后缓慢增大。当Ar流量为70 ml/min(标准状态)时,薄膜的悬挂键密度达到最低值4.42×1016cm-3。得出最佳Ar流量值为70 ml/min。
Silicon thin films were deposited on single-crystal Si (100) substrates by electron cyclotron resonance plasma enhanced chemical vapor deposition. The films were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), Raman spectroscopy, electron spin resonance (ESR) Spectroscopy and other experimental methods were studied under different Ar flow silicon film microstructure and dangling bond density changes. XRD and TEM results show that the prepared silicon film has a grain size of 12-16 nm and is a nanocrystalline silicon film. The crystallinity of the films increases with the increase of the Ar flow rate during the deposition, while the dangling bond density decreases rapidly and then slowly increases. When the Ar flow rate is 70 ml / min (standard state), the dying density of the film reaches the lowest value of 4.42 × 1016cm-3. The best Ar flow rate was found to be 70 ml / min.