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用退火的方法改变了纳米桂（nc－Si：H）薄膜的微结构。用Raman散射和共振核反应方法分析了薄膜的微结构变化。结果表明，薄膜的氢含量是影响薄膜光学带隙的主要因素，而薄膜的晶态体积比和晶粒尺寸是影响薄膜电导率的主要因素。
The microstructure of the nano-cinnamon (nc-Si: H) thin films was changed by annealing. The microstructure changes of the films were analyzed by Raman scattering and resonance nuclear reaction. The results show that the hydrogen content of the film is the main factor affecting the optical band gap of the film, and the crystalline volume ratio and the grain size of the film are the main factors affecting the film conductivity.