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本文研究了依赖于参数物理溅射铜的氧化以及相关金属电阻率铜基半导体薄膜的制备.研究发现,在物理溅射过程中,通过简单地调节沉积参数可以得到各种各样的铜基(氧化)薄膜,如纯Cu、Cu2O、Cu O薄膜和Cu/Cu2O、Cu2O/Cu O复合薄膜.文中揭示了物理溅射铜氧化的主要氧来源和依赖于参数的氧化机制.进一步地,电学和光学测试结果表明,所得的纯Cu薄膜和Cu/Cu2O复合薄膜均表现出奇异的金属、半导体双特性.
In this paper, the dependence of parameters on the physical sputtering of copper oxidation and the preparation of copper-based semiconductor films with related metal resistivity has been investigated. It has been found that various physical and chemical properties of copper-based semiconductor films can be obtained by simply adjusting deposition parameters during physical sputtering Oxide) thin films, such as pure Cu, Cu2O, CuO thin films and Cu / Cu2O, Cu2O / CuO composite films, the main source of oxygen and the parameter-dependent oxidation mechanism of physical sputtering copper oxidation are disclosed.Furthermore, Optical test results show that the resulting pure Cu film and Cu / Cu2O composite films both exhibit singular metal and semiconductor dual characteristics.