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报道了以Ａｌ２Ｏ３为衬底在ＧａＮ薄膜上ＬＰ－ＭＯＣＶＤ外延生长ＩｎＧａＮ单晶薄膜，并研究了ＩｎＧａＮ的生长特性。实验给出了ＩｎｘＧ１－ｘＮ合金的固相组分与汽相组分和生长温度的变化关系，并应用Ｘ射线衍射（ＸＲＤ）、Ｘ射线回摆曲线（ＸＲＣ）和室温光致荧光（ＰＬ）谱等技术对外延层的晶体质量、完整性和发光特性进行了分析。发现ＩｎＧａＮ／ＧａＮ系统中保持适当的压应力有助于提高外延层的晶体完整性，减少非故意掺杂杂质的引入，能改善外延层的发光特性。
The InGaN single crystal film grown by LP-MOCVD on GaN film with Al 2 O 3 as substrate was reported. The growth characteristics of InGaN were also studied. The relationship between the solid phase composition and the vapor phase composition and growth temperature of InxG1-xN alloy is given in this experiment. X-ray diffraction (XRD), X-ray X-ray diffraction (XRC) and room temperature photoluminescence (PL) Spectral techniques such as epitaxial layer of the crystal quality, integrity and luminescence properties were analyzed. It is found that maintaining the proper compressive stress in the InGaN / GaN system can improve the crystal integrity of the epitaxial layer, reduce the introduction of unintentional doping impurities, and improve the light emitting characteristics of the epitaxial layer.