利用二次离子质谱分析,对氧化硅内表面进行了氧含量的深度分析,结果表明:硅内表面层确实存在着氧扩散层,对于不同的氧化方式制备的样品,氧扩散层厚度不一,氧的纵向浓度分布规律也不同,然而,当扩散层厚度大于峰值位置以后,它们的分布规律变得大致相同。 The results of in-depth analysis of the oxygen content of the inner surface of the silicon oxide by secondary ion mass spectrometry show that there is indeed an oxygen diffusion layer in the silicon inner surface layer. For the samples prepared by different oxidation methods, the thickness of the oxygen diffusion layer is different, The longitudinal distribution of oxygen concentration is also different, however, when the diffusion layer thickness is greater than the peak position, their distribution becomes roughly the same.