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SIMOX/SOI样品在1000～1200℃的高温H_2气氛中作不同时间(5—30分)的烘烤。结果,SOI结构受到了不同程度的损伤。测试结果表明,这种损伤包括:高温H_2使SOI结构顶层Si中缺陷的扩展,高温H_2使埋层SiO_2分解和分解后的O_2(或H_2O)在外释过程中造成表层单晶Si的损伤。高温H_2对SIMOX结构的这种损伤对SIMOX/SOI的外延是不利的。
SIMOX / SOI samples were baked at different temperatures (5-30 minutes) in the high temperature H 2 atmosphere of 1000-1200 ℃. As a result, SOI structures have been damaged to varying degrees. The results show that this damage includes: the high temperature H_2 expands the defect of Si in the top layer of SOI structure; and the high temperature H_2 causes the damage of surface single crystal Si during the release of O_2 (or H_2O). This damage of high temperature H 2 to the SIMOX structure is detrimental to the SIMOX / SOI epitaxy.