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为明确深亚微米NMOS器件抗辐照能力以及研究其加固措施,本文对0.18μm窄沟NMOS晶体管进行了60Coγ总剂量辐射效应研究.结果表明:和宽沟器件不同,阈值电压、跨导、漏源电导对总剂量辐照敏感,此现象被称之为辐射感生窄沟道效应;相比较栅氧化层,器件隔离氧化层对总剂量辐照更敏感;窄沟道NMOS器件阈值电压不仅和沟道耗尽区电荷有关,寄生晶体管耗尽区电荷对其影响也不可忽略,而辐照引起源漏之间寄生晶体管开启,形成漏电通道,正是导致漏电流、亚阈斜率等参数变化的原因.
In order to clarify the anti-radiation ability of deep sub-micron NMOS devices and to study their reinforcement measures, the radiation effects of total dose of 60Coγ in 0.18μm narrow-channel NMOS transistors are studied. The results show that the threshold voltage, transconductance, The source conductance is sensitive to the total dose radiation, which is called the radiation induced narrow channel effect. Compared with the gate oxide, the device isolation oxide layer is more sensitive to the total dose radiation. The threshold voltage of the narrow channel NMOS device is not only Channel depletion region charge, parasitic transistor depletion region charge on its impact can not be ignored, and radiation caused by parasitic transistors between source and drain open to form a leakage channel, it is caused by leakage current, sub-threshold slope and other parameters the reason.