近几年,在单片计算器和存贮器中使用耗尽型负载技术已显著地提高了微处理机的性能和封装密度,例如,Intel公司的8080微处理机性能提高30%到4O%,它的周期时间由500ns降到350～440ns,指令执行时间由2μs降到1.3μs。可以期望,多电源n沟MOS处理机的周期时间可提高到100～200ns之间,这正好是肖特基双极二位和四位设计的微指令周期时间。 In recent years, the use of depletion mode load technology in monolithic calculators and memories has dramatically increased microprocessor performance and package density. For example, Intel Corporation’s 8080 microprocessor performance has increased by 30% to 40% , Its cycle time is reduced from 500ns to 350 ~ 440ns, the instruction execution time is reduced from 2μs to 1.3μs. It can be expected that the multi-power n-channel MOS processor cycle time can be increased to between 100 ~ 200ns, which is exactly Schottky bipolar two and four micro-instruction cycle time design.