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长波长光电集成电路(OEIC)的优点是成本低,可靠性高,改进性能后能适用于高比特率光纤通信系统。过去已报导过用InP材料可做出速度高达5Gbit/s的单片发射机OEIC和2Gbit/s的接收机OEIC。但是其集成度比GaAs基的OEIC低多了。原因是与GaAs工艺相比,InP基OEIC的器件工艺还很不成熟。最近,大家对异质外延的研究越来越广泛,异质外延的优点是;只要能控制不匹配材料的应变,就给最佳材料的选择增加了自由度。不少文献已报导过用MBE可在InP衬底上制作GaAs MESFET,它适合于长波长OEIC,得到的g_m高达170mS/mm,f_T为11
The advantages of long wavelength optoelectronic integrated circuits (OEICs) are low cost, high reliability and improved performance for high bit rate optical fiber communication systems. It has been reported in the past that monolithic transmitter OEICs and 2Gbit / s receiver OEICs can be made with InP materials at speeds up to 5 Gbit / s. However, its integration is much lower than that of GaAs-based OEICs. The reason is that the device technology of InP based OEIC is still not mature compared with that of GaAs. Recently, the research on heteroepitaxy has become more and more widespread. The advantage of heteroepitaxy is that as long as the strain of unmatched materials can be controlled, the freedom of selecting the best material is increased. It has been reported in many articles that GaAs MESFETs are fabricated on InP substrates using MBE, which is suitable for long-wavelength OEICs with gm of up to 170 mS / mm and fT of 11