Mo,as a dopant,is doped into SbTe to improve its thermal stability.It is shown in this paper that the Mo-doped Sb2Te3(Mo0.26Sb2Te3,MST) material possesses phase change memory (PCM) applications.MST has better thermal stability than Sb2Te3(ST) and will crystallize only when the annealing temperature is higher than 250 ℃.With the good thermal stability,MST-based PCM cells have a fast crystallization time of 6 ns.Furthermore,endurance up to 4 × 105 cycles with a resistance ratio of more than one order of magnitude makes MST a promising candidate for PCM applications.