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提出了具有n埋层pSOI三明治结构的射频功率LDMOS器件.漏至衬底寄生电容是影响射频功率LDMOS器件输出特性的重要因素之一,寄生电容越小,输出特性越好.分析表明n埋层pSOI三明治结构的射频功率LDMOS漏至衬底的结电容比常规射频功率LDMOS和n埋层pSOI射频功率LDMOS分别降低46.6%和11.5%.该结构器件1dB压缩点处的输出功率比常规LDMOS和n埋层pSOI LDMOS分别提高188%和10.6%,附加功率效率从n埋层pSOI LDMOS的37.3%增加到38.3%.同时该结构器件的耐压比常规LDMOS提高了约11%.
The RF power LDMOS device with n-buried pSOI sandwich structure is proposed.The parasitic leakage to the substrate is one of the important factors that affect the output characteristics of the RF power LDMOS device.The smaller the parasitic capacitance, the better the output characteristics.The analysis shows that the n-buried layer The junction capacitance of the pSOI sandwich RF power LDMOS drain to the substrate is 46.6% and 11.5% lower than that of the conventional RF power LDMOS and n-buried pSOI RF power LDMOS respectively.Compared with the conventional LDMOS and n The pSOI LDMOS of the buried layer increased by 188% and 10.6%, respectively, and the additional power efficiency increased from 37.3% of the n-buried pSOI LDMOS to 38.3%, and the breakdown voltage of the device increased about 11% compared with the conventional LDMOS.