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研究了作为薄膜开关应用的某些硫系玻璃。感兴趣的两个阈值电压范围是15伏和30伏。依据一个简单的数据标度估价和测定了薄膜器件的开关性能。以Ge-Te共晶体为基体的记忆玻璃通常已给出满意的性能。以Se为基体的玻璃薄膜呈现出高的阈值电压,但寿命有限。从Bi-As-Se玻璃得到了大约30伏的阈值电压;这些结果表明难以锁住“开”态,并对出现这种情况的可能原因进行了讨论。进行体材料特性方面的测量,以给出相应的玻璃薄膜所期待的特性。
Some of the chalcogenide glass used as membrane switches have been investigated. The two threshold voltage ranges of interest are 15 volts and 30 volts. The switching performance of thin film devices was evaluated and measured based on a simple data scale. Memory glasses based on Ge-Te cocrystals have generally given satisfactory performance. Se based glass films exhibit high threshold voltages, but have limited life. A threshold voltage of about 30 volts was obtained from the Bi-As-Se glass; these results indicate that it is difficult to lock the “on” state and the possible causes for this are discussed. The measurements of the bulk material properties were made to give the expected characteristics of the corresponding glass film.