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采用直接键合的方法成功实现了n-GaAs和p-GaN晶片的高质量键合.扫描电子显微镜观测结果表明,键合界面没有空洞.键合前后光致发光谱测试表明,键合工艺对材料质量影响不大.室温下界面的电流-电压特性表明,键合得到的n-GaAs/p-GaN异质结为肖特基二极管并且理想因子为1.08.n-GaAs和p-GaN材料直接键合的成功对于集成GaAs和GaN材料制备光电集成器件有重要意义.
The bonding of n-GaAs and p-GaN wafers was successfully achieved by direct bonding.The results of scanning electron microscopy showed that there was no cavity in the bonding interface.The photoluminescence spectra before and after bonding showed that the bonding process The current-voltage characteristics of the interface at room temperature show that the bonded n-GaAs / p-GaN heterojunction is a Schottky diode and the ideality factor is 1.08. The n-GaAs and p-GaN materials are directly The success of bonding is of great importance for the integration of optoelectronic integrated devices with GaAs and GaN materials.