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用ＳＥＭ方法观察分析了ＣＶＤ金刚石薄膜表面的缺陷形貌和结构，直观的两种缺陷为孪晶和孔洞。孪晶反映了晶粒的不完整性，它的产生取决于气相中活性分子的浓度与生长表面活性位数目的比值，孪晶比率随碳源浓度升高和衬底温度的降低而增大；孔洞反映了膜的不致密性，其产生与膜生长速率和衬底表面初始成核密度切相关，孔洞密度随碳源浓度升高和衬底温度的升高而增大。
The morphology and structure of the surface of CVD diamond films were observed and analyzed by SEM. The two defects were twins and voids. The twins reflect the grain imperfections, which depend on the ratio of the concentration of active molecules in the gas phase to the number of active sites on the growth surface. The twin ratio increases with the increase of the concentration of carbon source and the decrease of substrate temperature. Holes reflect the inhomogeneity of the film, which is related to the growth rate of the film and the initial nucleation density of the substrate surface. The hole density increases with increasing carbon source concentration and substrate temperature.