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作者用圆形磁控溅射装置,在氩和氮的混合气氛下淀积氮化钛薄膜。卢瑟福背散射谱和俄歇电子谱分析表明薄膜的化学配比为TiN。X射线衍射仪和透射式电子显微镜分析显示此种薄膜为多晶结构,晶粒大小为50～200埃。分光光度计测量结果表明在0.5～16微米波长范围内,它的光学反射率与纯金薄膜相似。氮化钛薄膜的电阻率为40～100微欧·厘米,它和N~+硅(电阻率为0.001欧姆·厘米)的接触电阻为6×10~(16)欧姆·厘米~2,和p型硅(电阻率为0.05欧姆·厘米)的接触电阻为6×10~(-3)欧姆·厘米~2。
The authors used a circular magnetron sputtering device to deposit a titanium nitride film under a mixed atmosphere of argon and nitrogen. Rutherford backscattering analysis and Auger electron spectroscopy analysis showed that the chemical formula of the film is TiN. X-ray diffractometry and transmission electron microscopy revealed that the film was polycrystalline and had a grain size of 50-200 angstroms. Spectrophotometer measurements show that in the wavelength range of 0.5 to 16 microns, its optical reflectivity and pure gold film similar. The titanium nitride film has a resistivity of 40 to 100 micro-ohm.cm and a contact resistance of 6x10 ~ (16) ohm.cm-2 with N + silicon (resistivity of 0.001 ohm-cm) and p The contact resistance of the silicon type (resistivity: 0.05 ohm · cm) is 6 × 10 -3 ohm · cm -2.