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Au在Si表面的成膜质量对金属辅助化学刻蚀法制备硅纳米线至关重要。以Ti、Cr作为浸润层,可显著改善Au在硅表面的成岛趋势,获得优质的Au膜并大幅度减少Au的使用量。同时,针对加入Ti、Cr后对Au辅助化学刻蚀影响的研究表明,Cr在刻蚀液中是稳定的,因此阻碍了Au催化刻蚀反应,而Ti与反应溶液快速反应,不影响Au对Si衬底化学刻蚀的催化作用。基于以上工作,以PS球为模板沉积制备Ti/Au(3nm/20nm)优质膜,使用金属辅助化学刻蚀,制备了有序的Si纳米线阵列。
The quality of Au deposited on the Si surface is crucial for the preparation of silicon nanowires by metal-assisted chemical etching. Taking Ti and Cr as wetting layers can significantly improve the islanding tendency of Au on silicon surface, obtain high quality Au film and greatly reduce the amount of Au used. At the same time, the study on the effect of adding Au and Au on the chemical etching of Ti and Cr shows that Cr is stable in the etching solution, which hinders the catalytic reaction of Au. Ti reacts rapidly with the reaction solution without affecting the Au Catalysis of Si Substrate Chemical Etching. Based on the above work, a Ti / Au (3nm / 20nm) high quality film was deposited by using PS spheres as a template, and an ordered Si nanowire array was prepared by metal assisted chemical etching.