一、引言对于砷化镓的电极金属正在大力进行研究。特别是由柯克斯等人所研究的 In-Ag-Ge 合金,甚至对低浓度的 N 型砷化镓也显示出欧姆特性,同时也适用于器件的电极金属。但是对于低浓度的 P 型和 N 型砷化镓的研究,以及对于砷化镓器件,特别是集成电路工艺的研究,尚有不少问题有待解决。本文叙述了关于砷化镓集成电路工艺所必须的电极工艺的研究结果。采用了 Ag+ I. INTRODUCTION Electrode metals for gallium arsenide are being vigorously studied. In particular, the In-Ag-Ge alloy studied by Kirks et al. Shows ohmic characteristics even for low-concentration N-type gallium arsenide, and also applies to the electrode metal of the device. However, there are still many problems to be solved in the research of low concentration P-type and N-type GaAs, as well as in the research of GaAs devices, especially integrated circuit technology. This article describes the results of research on the electrode technology necessary for the GaAs integrated circuit process. With Ag +