【摘 要】
：
众所周知,BaTiO_3系陶瓷半导体作为正特性热敏电阻已供实用。其形状仅限于块状烧结体。为了改善热的响应速度,试用了涂覆和溅射法制成膜状,但特性与块状材料不同。本文介绍
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众所周知,BaTiO_3系陶瓷半导体作为正特性热敏电阻已供实用。其形状仅限于块状烧结体。为了改善热的响应速度,试用了涂覆和溅射法制成膜状,但特性与块状材料不同。本文介绍一种新的制法,即利用施主离子的扩散,使BaTiO_3部分形成半导体层。
As we all know, BaTiO_3 ceramic semiconductor as the positive characteristics of the thermistor has been practical. Its shape is limited to bulk sintered body. In order to improve the response speed of the heat, the coating and sputtering methods have been tried to make films, but the characteristics are different from the bulk materials. This article describes a new system of law, that is, the use of donor ion diffusion, BaTiO_3 part of the semiconductor layer.
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