论文部分内容阅读
1.IGBT管的特点绝缘栅双极型晶体管(Iusulated Gate Bipolar Transistor,缩写IGBT)是一种集BJT的大电流密度和MOSFET电压激励场控型器件的优点于一体的高压高速大功率器件。目前有用不同材料及工艺制作的IGBT管,它们均可被看作是一个MOSFET输入跟随一个双极型晶体管
1. IGBT Tube Features Iusulated Gate Bipolar Transistor (IGBT) is a high-voltage and high-speed high-power device combining the advantages of BJT’s high current density and MOSFET voltage-activated field-controlled devices. Currently there are different materials and processes made of IGBT tubes, they can be regarded as a MOSFET input to follow a bipolar transistor